PART |
Description |
Maker |
SY58011UMG SY58011UMITR SY58011UMI SY58011U SY5801 |
7GHZ, 1:2 CML FANOUT BUFFER/TRANSLATOR WITH INTERNAL I/O TERMINATION
|
MICREL[Micrel Semiconductor]
|
MGFS48V2527 |
2.5 - 2.7GHz BAND 60W GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MGFC39V7177A |
7.1-7.7GHz BAND 8W Internally Matched GaAs FET
|
Mitsubishi Electric Corporation
|
MGFC39V7177A04 MGFC39V7177A |
7.1 ~ 7.7GHz BAND 8W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MGFC39V7177A |
7.1 - 7.7GHz BAND 8W INTERNALLY MATCHED GaAs FET 7.1 - 7.7GHz波段8瓦特内部匹配砷化镓场效应
|
Mitsubishi Electric, Corp. Mitsubishi Electric Semiconductor
|
MGFC40V6472 |
6.4 - 7.2GHz BAND 10W INTERNALLY MATCHED GaAs FET 6.4- 7.2GHz BAND 10W INTERNALLY MATCHED GaAs FET 6.4 - 7.2GHz频段10W的内部匹配砷化镓场效应管
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric, Corp.
|
RFRX1702 |
GaAs MMIC IQ Downconverter 17.7GHz to 19.7GHz
|
RF Micro Devices
|
MGFC40V3742A |
3.7 - 4.2GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
|
MGFC40V5258 |
5.2 - 5.8GHz BAND 10W INTERNALLY MATCHED GaAs FET 5.2 - 5.8GHz频段0W的内部匹配砷化镓场效应管
|
Mitsubishi Electric, Corp. MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
|
2SC5226A 2SC5226A12 ENA1062A |
RF Transistor, 10V, 70mA, fT=7GHz, NPN Single MCP VHF to UHF Wide-Band Low-Noise Amplifi er Applications
|
ON Semiconductor Sanyo Semicon Device
|